Strain-Induced Effects in Advanced MOSFETs - Computational Microelectronics - Viktor Sverdlov - Books - Springer Verlag GmbH - 9783709119334 - August 23, 2016
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Strain-Induced Effects in Advanced MOSFETs - Computational Microelectronics Softcover reprint of the original 1st ed. 2011 edition

Viktor Sverdlov

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Strain-Induced Effects in Advanced MOSFETs - Computational Microelectronics Softcover reprint of the original 1st ed. 2011 edition

Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. A rigorous overview of transport modeling in strained devices is given.

252 pages, 50 Tables, black and white; XIV, 252 p.

Media Books     Paperback Book   (Book with soft cover and glued back)
Released August 23, 2016
ISBN13 9783709119334
Publishers Springer Verlag GmbH
Pages 252
Dimensions 455 g
Language German  
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