![Study of Aln / Gan Hemts: Mbe Growths, Transport Properties and Device Issues - Yu Cao - Books - VDM Verlag Dr. Müller - 9783639336306 - March 13, 2011](https://imusic.b-cdn.net/images/item/original/306/9783639336306.jpg?yu-cao-2011-study-of-aln-gan-hemts-mbe-growths-transport-properties-and-device-issues-paperback-book&class=scaled&v=1647654362)
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Study of Aln / Gan Hemts: Mbe Growths, Transport Properties and Device Issues
Yu Cao
Study of Aln / Gan Hemts: Mbe Growths, Transport Properties and Device Issues
Yu Cao
The large polarization difference between AlN and GaN provides extremely high electron densities at the heterointerface covered by only 3-4 nm AlN barrier, which makes AlN/GaN heterojunction the ultimate nitride structure for high-frequency applications. This work includes the systematic study of the MBE growth of AlN/GaN HEMTs, theoretical study of 2DEG scattering mechanisms, and device issues of in-situ buffer leakage removal with polarization engineering and decreasing contact resistance with band diagram engineering. This book shows the approach to achieve the record high 2DEG density (5e13/cm2) and the record-low sheet resistance (128 ohm/sq) in high-quality AlN/GaN HEMTs. As a theoretical study, electron scattering mechanisms are reviewed in this book. A novel scattering mechanism, remote surface roughness scattering, is proposed. Large buffer leakage and ohmic contact resistance are two factors that heavily degrade high-speed device performance. Polarization engineering was applied in the buffer leakage study, which increased the ON/OFF ratio by >4 orders. Regrown Si-doped GaN and graded InGaN/InN contacts have been demonstrated with a comprehensive X-ray diffraction study.
Media | Books Paperback Book (Book with soft cover and glued back) |
Released | March 13, 2011 |
ISBN13 | 9783639336306 |
Publishers | VDM Verlag Dr. Müller |
Pages | 196 |
Dimensions | 226 × 11 × 150 mm · 294 g |
Language | English |